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GaAs Cell

Gallium arsenide’s forbidden band is wider than silicon, making its spectral response and spatial solar spectrum match better than silicon. The theoretical efficiency of silicon cells is about 23%, while the theoretical single-junction GaAs cell is more e

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Since the 1980s, GaAs solar cell technology has undergone several stages of evolution from LPE to MOCVD, from homoepitaxy to heteroepitaxy and from single junction to multi-junction stack structure. Its development speed and working efficiency are accelerating. The current laboratory maximum efficiency has reached 50% (from IBM data), rate of industrial production conversion is up to 30%.

“GaAs

GaAs is a group III-V compound semiconductor material, and its energy gap and solar spectrum are more matchable, and with higher thermostability. Compared with silicon solar cells, GaAs solar cells have better performance.

Gallium arsenide’s forbidden band is wider than silicon, making its spectral response and spatial solar spectrum match better than silicon. The theoretical efficiency of silicon cells is about 23%, while the theoretical single-junction GaAs cell efficiency of 27% and the multi-junction gallium arsenide cell theoretical efficiency is more than 50%.

Conventionally, gallium arsenide battery’s temperature resistance is better than the silicon photocell, experimental data shows that the gallium arsenide battery can work nornal under the conditions of 250 ℃, but the silicon photovoltaic cell can not have a normal operation at 200 ℃.

Gallium arsenide is physically more brittle than silicon, making it more brittle when it is processed, so it is often made into a thin film and its substrate (often Ge) is used against its disadvantages in this regard, but also increased the technical complexity.

Concentrated Battery Product Features:

Chip typical efficiency: higher than 39.2% (500suns)

Forbiden band width: 1.86eV InGaP / 1.40eV InGaAs /0.67eV Ge

Anti-reflection film: TiOx / Al2O3

Battery size: 10.1 × 11.01mm ± 0.1mm; 5.59 × 6.39mm ± 0.1mm

Battery effective area: 99.2 mm2 and 30.25mm2

Battery thickness: 195 ± 15μ m

Electro-polar: N-on-P

Other Information:

Root from space power technology, military technology to civilian;

Suitable for 500 times to 1000 times concentrated photovoltaic power generation;

Working temperature range: -40 ℃ to 100 ℃;

Max. withstanding temperature: 180 ℃.